Perspectives on domain engineering for dielectric energy storage thin films
Yiqian Liu, Bingbing Yang, Shun Lan, Hao Pan, Ce-Wen Nan and Yuan-Hua Lin
Appl. Phys. Lett. 120, 150501 (2022); https://doi.org/10.1063/5.0090739
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PHOTONICS AND OPTOELECTRONICS
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OpenApril 2022
Tunable spectral squeezers based on monolithically integrated diamond Raman resonators
E. Granados, G. Stoikos, D. T. Echarri, K. Chrysalidis, V. N. Fedosseev, C. Granados, V. Leask, B. A. Marsh and R. P. Mildren
Appl. Phys. Lett. 120, 151101 (2022); https://doi.org/10.1063/5.0088592
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FreeApril 2022
Large-scale flexible membrane with resonant silicon nanowires for infrared visualization via efficient third harmonic generation
Anna Nikolaeva, Viktoria Mastalieva, Alexander S. Gudovskikh, Ivan A. Morozov, Vladimir V. Fedorov, Mihail Petrov, Vladimir Neplokh, Ivan S. Mukhin and Sergey V. Makarov
Appl. Phys. Lett. 120, 151102 (2022); https://doi.org/10.1063/5.0088217
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SURFACES AND INTERFACES
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FreeApril 2022
Nanoscale friction of strained molybdenum disulfide induced by nanoblisters
Mingyuan Xu, Deliang Zhang, Yin Wang, Yuge Zhang, Qiang Li and Mingdong Dong
Appl. Phys. Lett. 120, 151601 (2022); https://doi.org/10.1063/5.0087756
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METASURFACES AND METAMATERIALS
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FreeApril 2022
Perfect retroreflection assisted by evanescent guided modes in acoustic metagratings
Xiao Li, Daxing Dong, Jiaqing Liu, Youwen Liu and Yangyang Fu
Appl. Phys. Lett. 120, 151701 (2022); https://doi.org/10.1063/5.0084253
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ADVANCED MATERIALS
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Effects of alloying and deposition temperature on phase formation and superconducting properties of TiZrTaNb-based high entropy-alloy films
Rui Shu, Xiaofu Zhang, Smita G. Rao, Arnaud le Febvrier and Per Eklund
Appl. Phys. Lett. 120, 151901 (2022); https://doi.org/10.1063/5.0091777
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FreeApril 2022
Observation of room-temperature amplitude mode in quasi-one-dimensional charge-density-wave material CuTe
Shuyang Wang (王舒阳), Xuliang Chen (陈绪亮), Chao An, Ying Zhou, Min Zhang, Yonghui Zhou, Yuyan Han and Zhaorong Yang
Appl. Phys. Lett. 120, 151902 (2022); https://doi.org/10.1063/5.0086821
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FreeApril 2022
Ultra-wide-temperature-range superelasticity and intrinsic two-way shape memory effect in Co–Ni–Ga microwires
Xiangyu Zhang, Haiyang Chen, Yurong Niu, Runguang Li, Tao Yin, Runqiu Lang, Chao Song, Lingyun Meng, Daoyong Cong, Shilei Li and Yan-Dong Wang
Appl. Phys. Lett. 120, 151903 (2022); https://doi.org/10.1063/5.0089321
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Strong quantum-confined excitation and emission from violet phosphorus quantum dots
Y. W. Zhan, K. Yan, J. H. Wu, H. G. Zhu, J. Chen, S. L. Tang, Z. Y. Zhang and X. L. Wu
Appl. Phys. Lett. 120, 151904 (2022); https://doi.org/10.1063/5.0089468
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SEMICONDUCTORS
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OpenApril 2022
Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method
Zbigniew Galazka, Steffen Ganschow, Palvan Seyidov, Klaus Irmscher, Mike Pietsch, Ta-Shun Chou, Saud Bin Anooz, Raimund Grueneberg, Andreas Popp, Andrea Dittmar, Albert Kwasniewski, Manuela Suendermann, Detlef Klimm, Thomas Straubinger, Thomas Schroeder and Matthias Bickermann
Appl. Phys. Lett. 120, 152101 (2022); https://doi.org/10.1063/5.0086996
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Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform
Zheyang Zheng, Tao Chen, Li Zhang, Wenjie Song and Kevin J. Chen
Appl. Phys. Lett. 120, 152102 (2022); https://doi.org/10.1063/5.0086954
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MAGNETICS AND SPINTRONICS
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Nanosecond ultralow power spin orbit torque magnetization switching driven by BiSb topological insulator
Nguyen Huynh Duy Khang, Takanori Shirokura, Tuo Fan, Mao Takahashi, Naoki Nakatani, Daisuke Kato, Yasuyoshi Miyamoto and Pham Nam Hai
Appl. Phys. Lett. 120, 152401 (2022); https://doi.org/10.1063/5.0084927
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Parametrically driven THz magnon-pairs: Predictions toward ultimately fast and minimally dissipative switching
G. Fabiani and J. H. Mentink
Appl. Phys. Lett. 120, 152402 (2022); https://doi.org/10.1063/5.0080161
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FreeApril 2022
Grain refinement leading to the ultra-high coercivity in L10-Mn1.33Ga bulk magnet via hot deformation
Q. M. Lu, S. Gao, Y. Q. Li, H. G. Zhang, W. Q. Liu and M. Yue
Appl. Phys. Lett. 120, 152403 (2022); https://doi.org/10.1063/5.0080903
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DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
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Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties
Joseph Casamento, Hyunjea Lee, Takuya Maeda, Ved Gund, Kazuki Nomoto, Len van Deurzen, Wesley Turner, Patrick Fay, Sai Mu, Chris G. Van de Walle, Amit Lal, Huili (Grace) Xing and Debdeep Jena
Appl. Phys. Lett. 120, 152901 (2022); https://doi.org/10.1063/5.0075636
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LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS
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Bandgap tuning, high electrical conductivity, and room-temperature ferromagnetism in La- and V-doped SrSnO3 epitaxial films
Li Zhao, Haozhe Li, Kai Lv, Haifeng Wang and Qinzhuang Liu
Appl. Phys. Lett. 120, 153101 (2022); https://doi.org/10.1063/5.0078854
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SOLUTION-PROCESSABLE ELECTRONICS AND PHOTONICS
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Improved electric contact of recessed source and drain electrodes for sol–gel-based thin-film transistors consisting of amorphous ZrO2 and IGZO fabricated by microwave-annealing
Sang-Joon Park and Tae-Jun Ha
Appl. Phys. Lett. 120, 153301 (2022); https://doi.org/10.1063/5.0086833
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DEVICE PHYSICS AND NANOTECHNOLOGY
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Single β-Ga2O3 nanowire based lateral FinFET on Si
Siyuan Xu, Lining Liu, Guangming Qu, Xingfei Zhang, Chunyang Jia, Songhao Wu, Yuanxiao Ma, Young Jin Lee, Guodong Wang, Ji-Hyeon Park, Yiyun Zhang, Xiaoyan Yi, Yeliang Wang and Jinmin Li
Appl. Phys. Lett. 120, 153501 (2022); https://doi.org/10.1063/5.0086909
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ERRATA
FreeApril 2022
Erratum: “Transparent and electrically tunable electromagnetic wave absorbing metamaterial” [Appl. Phys. Lett. 120, 094101 (2022)]
Yang Liu, Jianbang Zhou, Qi Chang, Ji Liu, Jinzu Ji and Li-Hua Shao
Appl. Phys. Lett. 120, 159901 (2022); https://doi.org/10.1063/5.0092009
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FreeApril 2022
Publisher's Note: “Effect of thermal annealing on dielectric and ferroelectric properties of aerosol-deposited 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 thick films” [Appl. Phys. Lett. 120, 112902 (2022)]
Kevin Nadaud, Matej Sadl, Micka Bah, Franck Levassort and Hana Ursic
Appl. Phys. Lett. 120, 159902 (2022); https://doi.org/10.1063/5.0093858
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FreeApril 2022
Publisher's Note: “Modulated structure and hopping transport mechanism involving a defect-induced localization–delocalization transition in a Ca–Ce(La)–Nb–W–O system” [Appl. Phys. Lett. 120, 112106 (2022)]
Yuanwei Lin, Jinan Shi, Wu Zhou, Wanglai Cen, Aimin Chang and Bo Zhang
Appl. Phys. Lett. 120, 159903 (2022); https://doi.org/10.1063/5.0093863
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