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One-dimensional van der Waals materials—Advent of a new research field
Alexander A. Balandin, Roger K. Lake and Tina T. Salguero
Appl. Phys. Lett. 121, 040401 (2022); https://doi.org/10.1063/5.0108414
PERSPECTIVES
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FreeJuly 2022
Multimodal light-sensing pixel arrays
Yurui Qu, Soongyu Yi, Lan Yang and Zongfu Yu
Appl. Phys. Lett. 121, 040501 (2022); https://doi.org/10.1063/5.0090138
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PHOTONICS AND OPTOELECTRONICS
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Critical spatial disorder in InGaN resonant Bragg structures
A. A. Ivanov, V. V. Chaldyshev, V. I. Ushanov, E. E. Zavarin, A. V. Sakharov, W. V. Lundin and A. F. Tsatsulnikov
Appl. Phys. Lett. 121, 041101 (2022); https://doi.org/10.1063/5.0095417
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Photo-electro-striction in halide perovskite semiconductors
Zeen Zhao, Yecheng Ding, Xuefeng Zhao, Yaojin Wang, Ben Xu, Guanghua Liu, Guoliang Yuan and Jun-Ming Liu
Appl. Phys. Lett. 121, 041102 (2022); https://doi.org/10.1063/5.0099954
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Probing the charge and heat transfer channels in optically excited graphene — transition metal dichalcogenide hybrids using Johnson noise thermometry
Aniket Majumdar, Saloni Kakkar, Nivedith Kuttikunnummal Anil, Tathagata Paul, T. Phanindra Sai, Kenji Watanabe, Takashi Taniguchi and Arindam Ghosh
Appl. Phys. Lett. 121, 041103 (2022); https://doi.org/10.1063/5.0099383
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METASURFACES AND METAMATERIALS
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Acoustic skin effect with non-reciprocal Willis materials
Wen Cheng and Gengkai Hu
Appl. Phys. Lett. 121, 041701 (2022); https://doi.org/10.1063/5.0093247
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SEMICONDUCTORS
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Correlative study between the local atomic and electronic structures of amorphous carbon materials via 4D-STEM and STEM-EELS
Jinseok Ryu, Sangmin Lee, Sungtae Kim, Young-Chang Joo and Miyoung Kim
Appl. Phys. Lett. 121, 042101 (2022); https://doi.org/10.1063/5.0100925
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Pressure-induced photoconductivity enhancement and positive–negative switch in bulk silicon
Chenyi Li, Ran Liu, Tingting Zhao, Zonglun Li, Lei Yue, Tao Lin, Xueting Zhang, Quanjun Li and Bingbing Liu
Appl. Phys. Lett. 121, 042102 (2022); https://doi.org/10.1063/5.0094431
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Electron mobility in ordered β-(AlxGa1−x)2O3 alloys from first-principles
Xinlei Duan, Tianyu Wang, Zhiwei Fu, Jia-Yue Yang and Linhua Liu
Appl. Phys. Lett. 121, 042103 (2022); https://doi.org/10.1063/5.0096341
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The foundations of Shockley's equation for the average electron–hole-pair creation energy in semiconductors
Sokrates T. Pantelides, D. Greg Walker, Mahmud Reaz, Massimo V. Fischetti and Ronald D. Schrimpf
Appl. Phys. Lett. 121, 042104 (2022); https://doi.org/10.1063/5.0088142
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Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers
Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Timothy Jinsoo Yoo, Fan Ren, Honggyu Kim and S. J. Pearton
Appl. Phys. Lett. 121, 042105 (2022); https://doi.org/10.1063/5.0097564
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Ultra-small size (1–20 μm) blue and green micro-LEDs fabricated by laser direct writing lithography
Luming Yu, Boyang Lu, Ping Yu, Yang Wang, Guojian Ding, Qi Feng, Yang Jiang, Hong Chen, Kai Huang, Zhibiao Hao, Jiadong Yu, Yi Luo, Changzheng Sun, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li and Lai Wang
Appl. Phys. Lett. 121, 042106 (2022); https://doi.org/10.1063/5.0099642
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Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy
Diego Vaca, Matthew Barry, Luke Yates, Neeraj Nepal, D. Scott Katzer, Brian P. Downey, Virginia Wheeler, Luke Nyakiti, David J. Meyer, Samuel Graham and Satish Kumar
Appl. Phys. Lett. 121, 042107 (2022); https://doi.org/10.1063/5.0098048
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PHONONIC, ACOUSTIC, AND THERMAL PROPERTIES
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Polarization rotator for shear elastic waves
Yuqi Jin, Teng Yang, Tae-Youl Choi, Narendra B. Dahotre, Arup Neogi and Arkadii Krokhin
Appl. Phys. Lett. 121, 042201 (2022); https://doi.org/10.1063/5.0090261
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Cross-scale investigation of the size effect on thermal conductivity of monolayer graphene
Jie Wang, Chao Li, Yunhe Sheng, Yu Su and Lina Yang
Appl. Phys. Lett. 121, 042202 (2022); https://doi.org/10.1063/5.0096870
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Phonon properties of biphenylene monolayer by first-principles calculations
Ke Wang, Kai Ren, Dingbo Zhang, Yuan Cheng and Gang Zhang
Appl. Phys. Lett. 121, 042203 (2022); https://doi.org/10.1063/5.0102085
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MAGNETICS AND SPINTRONICS
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Magnetoacoustic waves controlled by in-plane uniaxial magnetic anisotropy
Runliang Gao, Yuchen Ye, Huiliang Wu, Xiaolei Li, Xindan Liu, Jianbo Wang and Qingfang Liu
Appl. Phys. Lett. 121, 042401 (2022); https://doi.org/10.1063/5.0094824
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Realization of the skyrmionic logic gates and diodes in the same racetrack with enhanced and modified edges
Yun Shu, Qianrui Li, Jing Xia, Ping Lai, Zhipeng Hou, Yonghong Zhao, Degang Zhang, Yan Zhou, Xiaoxi Liu and Guoping Zhao
Appl. Phys. Lett. 121, 042402 (2022); https://doi.org/10.1063/5.0097152
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Electron mediation enhanced magnetocrystalline anisotropy and Curie temperature of FeCl2 monolayer by an electride substrate
Rui Li, Jiawei Jiang, Haili Bai and Wenbo Mi
Appl. Phys. Lett. 121, 042403 (2022); https://doi.org/10.1063/5.0101627
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Large tunneling magnetoresistance and low resistance-area product in CrSe2/NiCl2/CrSe2 van der Waals magnetic tunnel junction
Xiaoyan Guo, Yu Zhu, Baishun Yang, Xiaolin Zhang, Xiufeng Han and Yu Yan
Appl. Phys. Lett. 121, 042404 (2022); https://doi.org/10.1063/5.0098687
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DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
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Vertical ferroelectric thin-film transistor array with a 10-nm gate length for high-density three-dimensional memory applications
Ik-Jyae Kim, Min-Kyu Kim and Jang-Sik Lee
Appl. Phys. Lett. 121, 042901 (2022); https://doi.org/10.1063/5.0097795
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A Landau–Devonshire analysis of strain effects on ferroelectric Al1−xScxN
Keisuke Yazawa, Andriy Zakutayev and Geoff L. Brennecka
Appl. Phys. Lett. 121, 042902 (2022); https://doi.org/10.1063/5.0098979
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Ferroelectric diode characteristic and tri-state memory in self-assembled BiFeO3 nanoislands with cross-shaped domain structure
Xiang Zhou, Haoyang Sun, Zhen Luo, Haoyu Zhao, Deshan Liang, Hasnain Mehdi Jafri, Houbing Huang, Yuewei Yin and Xiaoguang Li
Appl. Phys. Lett. 121, 042903 (2022); https://doi.org/10.1063/5.0096858
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LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS
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Non-monotonic changes in conductance of Bi(111) films induced by Cs adsorption
N. V. Denisov, A. V. Matetskiy, A. V. Zotov and A. A. Saranin
Appl. Phys. Lett. 121, 043101 (2022); https://doi.org/10.1063/5.0099617
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DEVICE PHYSICS AND NANOTECHNOLOGY
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Charge transport behaviors in a multi-gated WSe2/MoS2 heterojunction
Maolong Yang, Yao Lu, Qiancui Zhang, Zhao Han, Yichi Zhang, Maliang Liu, Ningning Zhang, Huiyong Hu and Liming Wang
Appl. Phys. Lett. 121, 043501 (2022); https://doi.org/10.1063/5.0097390
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High resolution magnetic microscopy based on semi-encapsulated graphene Hall sensors
Penglei Li, David Collomb, Zhen Jieh Lim, Sara Dale, Philippa Shepley, Gavin Burnell and Simon J. Bending
Appl. Phys. Lett. 121, 043502 (2022); https://doi.org/10.1063/5.0097936
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BIOPHYSICS, BIOIMAGING, AND BIOSENSORS
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Bessel beam induced deep-penetrating bioimaging and self-monitored heating using Nd/Yb heavily doped nanocrystals
Danyang Ning, Li Xu, Yin Zhu, Dongyu Li, Haili Jiang, Joan Josep Carvajal, Hanyang Li, Jing Ren, Lu Liu and Jianzhong Zhang
Appl. Phys. Lett. 121, 043701 (2022); https://doi.org/10.1063/5.0095439
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Ultrasound shear-wave computed tomography for elasticity imaging
Geng-Shi Jeng, Chia-Lun Yeh, Chia-Lin Lee, Yung-Shao Yang, Ling-Yi Tseng and Pai-Chi Li
Appl. Phys. Lett. 121, 043702 (2022); https://doi.org/10.1063/5.0100628
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INTERDISCIPLINARY APPLIED PHYSICS
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Generation of nanosecond THz pulses using a high gain ring resonator with a semiconductor switch
J. Genoud, E. L. Claveau, S. K. Jawla, G. Li, J. F. Picard, M. A. Shapiro and R. J. Temkin
Appl. Phys. Lett. 121, 044101 (2022); https://doi.org/10.1063/5.0098718
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Irreversible phase transitions of the multiferroic oxide Mn3TeO6 at high pressures
Lei Liu, Hua Y. Geng, Xiaolong Pan, Hong X. Song, Sergey Ivanov, Roland Mathieu, Matthias Weil, Yanchun Li, Xiaodong Li and Peter Lazor
Appl. Phys. Lett. 121, 044102 (2022); https://doi.org/10.1063/5.0100302