EDITORIALS
FullAugust 2022Special Collections Icon
Thermoelectric materials science and technology toward applications
Kanishka Biswas, Zhifeng Ren, Yuri Grin, Kyu Hyoung Lee, Takao Mori and Lidong Chen
Appl. Phys. Lett. 121, 070401 (2022); https://doi.org/10.1063/5.0115322
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PERSPECTIVES
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FullAugust 2022
Achieving high-energy-density lithium-ion batteries through oxygen redox of cathode: From fundamentals to applications
Sichen Jiao, Quan Li, Xinyun Xiong, Xiqian Yu, Hong Li, Liquan Chen and Xuejie Huang
Appl. Phys. Lett. 121, 070501 (2022); https://doi.org/10.1063/5.0096578
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OpenAugust 2022
A Perspective on microneedle sensor arrays for continuous monitoring of the body's chemistry
D. M. E. Freeman and A. E. G. Cass
Appl. Phys. Lett. 121, 070502 (2022); https://doi.org/10.1063/5.0097040
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FullAugust 2022
Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices
D. M. Fleetwood
Appl. Phys. Lett. 121, 070503 (2022); https://doi.org/10.1063/5.0105173
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FAST TRACK
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FullAugust 2022
Strain engineering of quantum confinement in WSe2 on nano-roughness glass substrates
Caique Serati de Brito, Cesar Ricardo Rabahi, Marcio Daldin Teodoro, Douglas F. Franco, Marcelo Nalin, Ingrid D. Barcelos and Yara Galvão Gobato
Appl. Phys. Lett. 121, 070601 (2022); https://doi.org/10.1063/5.0107201
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PHOTONICS AND OPTOELECTRONICS
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A machine learning strategy for modeling and optimal design of near-field radiative heat transfer
Shizheng Wen, Chunzhuo Dang and Xianglei Liu
Appl. Phys. Lett. 121, 071101 (2022); https://doi.org/10.1063/5.0103363
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FullAugust 2022
Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures
Florian Sigger, Hendrik Lambers, Katharina Nisi, Julian Klein, Nihit Saigal, Alexander W. Holleitner and Ursula Wurstbauer
Appl. Phys. Lett. 121, 071102 (2022); https://doi.org/10.1063/5.0109189
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FullAugust 2022
Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells
Panpan Li, Haojun Zhang, Hongjian Li, Trevor Cohen, Ryan Anderson, Matthew S. Wong, Emily Trageser, Yi Chao Chow, Mattanjah de Vries, Shuji Nakamura and Steven P. DenBaars
Appl. Phys. Lett. 121, 071103 (2022); https://doi.org/10.1063/5.0093264
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OpenAugust 2022
High-performance single-shot fourth-order auto-correlator with real-time accuracy self-validation
Peng Wang, Xiong Shen, Yaping Xuan, Shunlin Huang and Jun Liu
Appl. Phys. Lett. 121, 071104 (2022); https://doi.org/10.1063/5.0098148
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FullAugust 2022
Large third-order optical nonlinearities of two-dimensional CsPbBr3 nanoplatelets
Ruiqin Huang (黄瑞琴), Enze Kang (康恩泽), Han Gao (高寒), Renbo Guo (郭仁波), Qingsong Hu (胡青松) and Yibo Han (韩一波)
Appl. Phys. Lett. 121, 071105 (2022); https://doi.org/10.1063/5.0106761
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OpenAugust 2022
Coherent control of transverse modes in semiconductor laser frequency combs via radio-frequency injection
Sandro Dal Cin, Florian Pilat, Aleš Konečný, Nikola Opačak, Gottfried Strasser and Benedikt Schwarz
Appl. Phys. Lett. 121, 071106 (2022); https://doi.org/10.1063/5.0098474
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SURFACES AND INTERFACES
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FullAugust 2022
Physical mechanisms for delaying condensation freezing on grooved and sintered wicking surfaces
Emily M. Stallbaumer-Cyr, Melanie M. Derby and Amy R. Betz
Appl. Phys. Lett. 121, 071601 (2022); https://doi.org/10.1063/5.0105412
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FullAugust 2022
Gate-free tunable 2D/2D heterojunction composed of MoTe2 and 2D electron gas at the surface of KTaO3
Jie Qiu, Ju Li, Xiaowei Zhou, Bocheng Li, Xiaochen Tian, Yucheng Jiang, Run Zhao, Meng Zhao, Ju Gao, Jie Xing and Guozhen Liu
Appl. Phys. Lett. 121, 071602 (2022); https://doi.org/10.1063/5.0100028
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FullAugust 2022
Electrical and optical properties of InSe with various interfaces
Lili Zhou, Yanhui Lv, Yue Zhao, Gang Wu, Peiyao Xiao, Jiung Cho, Miri Choi, Cormac Ó Coileáin, Ching-Ray Chang and Han-Chun Wu
Appl. Phys. Lett. 121, 071603 (2022); https://doi.org/10.1063/5.0090684
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METASURFACES AND METAMATERIALS
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Inverse design of acoustic metasurfaces using space-filling points
Arvind Krishna, Steven R. Craig, Chengzhi Shi and V. Roshan Joseph
Appl. Phys. Lett. 121, 071701 (2022); https://doi.org/10.1063/5.0096869
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Reversible topological non-reciprocity by positive–negative Poisson's ratio switch in chiral metamaterials
Wen-Ting Gao, Chenwen Yang, Yu-Tao Tan and Jie Ren
Appl. Phys. Lett. 121, 071702 (2022); https://doi.org/10.1063/5.0104358
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FullAugust 2022
Terahertz radiation enhancement in gallium arsenide nano-hole array under low power optical pump
Kemeng Wang, Yangfan Gu, Yongchang Lu, Jianqiang Gu and Weili Zhang
Appl. Phys. Lett. 121, 071703 (2022); https://doi.org/10.1063/5.0099288
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SEMICONDUCTORS
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High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors
J. Cañas, C. Dussarrat, T. Teramoto, C. Masante, M. Gutierrez and E. Gheeraert
Appl. Phys. Lett. 121, 072101 (2022); https://doi.org/10.1063/5.0103037
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RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs
Xinxin Yu, Hehe Gong, Jianjun Zhou, Zhenghao Shen, Fang-fang Ren, Dunjun Chen, Xin Ou, Yuechan Kong, Zhonghui Li, Tangsheng Chen, Shulin Gu, Rong Zhang, Youdou Zheng and Jiandong Ye
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Appl. Phys. Lett. 121, 072102 (2022); https://doi.org/10.1063/5.0098610
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FullAugust 2022
Enhancement of valley polarization in CVD grown monolayer MoS2 films
Poulab Chakrabarti, Faiha Mujeeb and Subhabrata Dhar
Appl. Phys. Lett. 121, 072103 (2022); https://doi.org/10.1063/5.0103821
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FullAugust 2022
Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors
Kyumin Lee, Laeyong Jung and Hyunsang Hwang
Appl. Phys. Lett. 121, 072104 (2022); https://doi.org/10.1063/5.0098444
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FullAugust 2022
Understanding synaptic characteristics of nonvolatile analog redox transistor based on mobile ion-modulated-electrolyte thickness model for neuromorphic applications
Nayeon Kim, Heebum Kang, Hyun Wook Kim, Eunryeong Hong and Jiyong Woo
Appl. Phys. Lett. 121, 072105 (2022); https://doi.org/10.1063/5.0099827
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FullAugust 2022
On the conduction mechanism in compositionally graded AlGaN
Shashwat Rathkanthiwar, Pegah Bagheri, Dolar Khachariya, Ji Hyun Kim, Yasutomo Kajikawa, Pramod Reddy, Seiji Mita, Ronny Kirste, Baxter Moody, Ramon Collazo and Zlatko Sitar
Appl. Phys. Lett. 121, 072106 (2022); https://doi.org/10.1063/5.0100756
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OpenAugust 2022
Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects
A. Ajay, H. Jeong, T. Schreitmüller, M. Döblinger, D. Ruhstorfer, N. Mukhundhan, P. A. L. M. Koolen, J. J. Finley and G. Koblmüller
Appl. Phys. Lett. 121, 072107 (2022); https://doi.org/10.1063/5.0095952
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FullAugust 2022
Controlled Si doping of β-Ga2O3 by molecular beam epitaxy
J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T. Neal, N. Tanen, Y. Cho, T. J. Asel, S. Mou, P. Vogt, H. G. Xing and D. Jena
Appl. Phys. Lett. 121, 072108 (2022); https://doi.org/10.1063/5.0101132
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FullAugust 2022
Mechanism of reverse gate leakage current reduction in AlGaN/GaN high-electron-mobility-transistor after 3-MeV proton irradiation
Chang-Hao Sun, Chao Peng, Zhan-Gang Zhang, Jin-Bin Wang, Shao-Zhong Yue, Hong Zhang, Zi-Wen Chen, Xiao-Ping Ou-Yang, Zhi-Feng Lei and Xiang-Li Zhong
Appl. Phys. Lett. 121, 072109 (2022); https://doi.org/10.1063/5.0102366
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FullAugust 2022
Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications
Peng-Fei Wang, Min-Han Mi, Xiang Du, Yu-Wei Zhou, Jie-Long Liu, Zhi-Hong Chen, Si-Rui An, Yi-Lin Chen, Jie-Jie Zhu, Xue-Feng Zheng, Xiao-Hua Ma and Yue Hao
Appl. Phys. Lett. 121, 072110 (2022); https://doi.org/10.1063/5.0096542
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FullAugust 2022
Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3
Timothy Yoo, Xinyi Xia, Fan Ren, Alan Jacobs, Marko J. Tadjer, Stephen Pearton and Honggyu Kim
Appl. Phys. Lett. 121, 072111 (2022); https://doi.org/10.1063/5.0099915
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