PHOTONICS AND OPTOELECTRONICS
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Radiative sky cooling of silicon solar modules: Evaluating the broadband effectiveness of photonic structures
Jérémy Dumoulin, Emmanuel Drouard and Mohamed Amara
Appl. Phys. Lett. 121, 231101 (2022); https://doi.org/10.1063/5.0116629
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FreeDecember 2022
Ion transfer into solution-processed electrodes can significantly shift the p–n junction and emission efficiency of light-emitting electrochemical cells
Etienne Auroux, So-Ra Park, Joan Ràfols-Ribé and Ludvig Edman
Appl. Phys. Lett. 121, 231102 (2022); https://doi.org/10.1063/5.0123469
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Brewster differential microscopy
Ruisi Wang, Shanshan He, Shizhen Chen and Hailu Luo
Appl. Phys. Lett. 121, 231103 (2022); https://doi.org/10.1063/5.0131424
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SURFACES AND INTERFACES
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Synergistic effect of covalent functionalization and intrinsic electric field on β-Ga2O3/graphene heterostructures
Haidong Yuan, Jie Su, Jie Zhang, Zhenhua Lin, Jincheng Zhang, Jingjing Chang and Yue Hao
Appl. Phys. Lett. 121, 231601 (2022); https://doi.org/10.1063/5.0120142
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Coalescence-induced propulsion of droplets on a superhydrophilic wire
Youhua Jiang, Leyun Feng, Allison O'Donnell, Christian Machado, Wonjae Choi, Neelesh A. Patankar and Kyoo-Chul Park
Appl. Phys. Lett. 121, 231602 (2022); https://doi.org/10.1063/5.0124560
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Nonequilibrium Casimir–Lifshitz friction force and anomalous radiation heating of a small particle
G. V. Dedkov
Appl. Phys. Lett. 121, 231603 (2022); https://doi.org/10.1063/5.0115748
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METASURFACES AND METAMATERIALS
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Dissipation driven degeneracies
A. Srikantha Phani
Appl. Phys. Lett. 121, 231701 (2022); https://doi.org/10.1063/5.0118099
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OpenDecember 2022
On-chip light trapping in bilayer moiré photonic crystal slabs
Haoning Tang, Xueqi Ni, Fan Du, Vishantak Srikrishna and Eric Mazur
Appl. Phys. Lett. 121, 231702 (2022); https://doi.org/10.1063/5.0105365
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Wideband mid infrared absorber using surface doped black silicon
S. Sarkar, E. Nefzaoui, G. Hamaoui, F. Marty, P. Basset and T. Bourouina
Appl. Phys. Lett. 121, 231703 (2022); https://doi.org/10.1063/5.0117289
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SEMICONDUCTORS
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Schottky barrier contact on In0.53Ga0.47As with short-wave infrared transparent conductive oxide
Tatsuro Maeda, Kazuaki Oishi, Hiroto Ishii, Hiroyuki Ishii, Wen Hsin Chang, Tetsuji Shimizu, Akira Endoh, Hiroki Fujishiro and Takashi Koida
Appl. Phys. Lett. 121, 232102 (2022); https://doi.org/10.1063/5.0129445
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MAGNETICS AND SPINTRONICS
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Effective spin injection into the organic semiconductor PTCDA evaluated by a normalization method
Sheng-Yueh Weng, M. Sanjoy Singh, Cheng-Feng Hong, Wen-Teng Lin, Po-Hsun Wu, Ssu-Yen Huang, Jauyn Grace Lin, Yu-Hsun Chu, Wen-Chung Chiang and Minn-Tsong Lin
Appl. Phys. Lett. 121, 232401 (2022); https://doi.org/10.1063/5.0106446
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Wideband Brillouin light scattering analysis of spin waves excited by a white-noise RF generator
Lukáš Flajšman, Ondřej Wojewoda, Huajun Qin, Kristýna Davídková, Michal Urbánek and Sebastiaan van Dijken
Appl. Phys. Lett. 121, 232402 (2022); https://doi.org/10.1063/5.0124764
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Spin Hall magnetoresistance in Pt/Y3Fe5O12 bilayers grown on Si and Gd3Ga5O12 substrates
Kenta Fukushima, Kohei Ueda, Naoki Moriuchi, Takanori Kida, Masayuki Hagiwara and Jobu Matsuno
Appl. Phys. Lett. 121, 232403 (2022); https://doi.org/10.1063/5.0124583
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Plateau-like magnetoresistance and topological Hall effect in Kagome magnets TbCo2 and DyCo2
Dan Huang, Hang Li, Bei Ding, Xuekui Xi, Jianrong Gao, Yong-Chang Lau and Wenhong Wang
Appl. Phys. Lett. 121, 232404 (2022); https://doi.org/10.1063/5.0111086
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Spin direction tunable topological transition in two-dimensional frustrate antiferromagnetic triangular lattice T-FeO2 monolayer
Bingwen Zhang, Xuejiao Chen, Fenglin Deng, Xiaodong Lv, Cheng Zhang, Biao Zheng, Huining Wang and Jun Wang
Appl. Phys. Lett. 121, 232405 (2022); https://doi.org/10.1063/5.0123488
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SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
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Broadband SNAIL parametric amplifier with microstrip impedance transformer
D. Ezenkova, D. Moskalev, N. Smirnov, A. Ivanov, A. Matanin, V. Polozov, V. Echeistov, E. Malevannaya, A. Samoylov, E. Zikiy and I. Rodionov
Appl. Phys. Lett. 121, 232601 (2022); https://doi.org/10.1063/5.0129862
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DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
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Effect of electrically induced cracks on the properties of PZT thin film capacitors
Hugo Kuentz, Baba Wagué, Nicolas Vaxelaire, Valérie Demange, Christophe Poulain, Maryline Guilloux-Viry and Gwenael Le Rhun
Appl. Phys. Lett. 121, 232901 (2022); https://doi.org/10.1063/5.0127111
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High temperature piezoelectric accelerometer fabricated by 0.75BiFeO3–0.25BaTiO3 ceramics with operating temperature over 450 °C
Jianguo Chen, Jingen Wu, Yun Lu, Yan Wang and Jinrong Cheng
Appl. Phys. Lett. 121, 232902 (2022); https://doi.org/10.1063/5.0131097
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LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS
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Revealing the intrinsic transport properties of antiperovskite Sr3SnO thin films
Wangzhou Wu, Nicholas G. Combs and Susanne Stemmer
Appl. Phys. Lett. 121, 233101 (2022); https://doi.org/10.1063/5.0128316
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Understanding bulk photovoltaic effect in type-II Weyl semimetal Td-WTe2 using polarization dependent photocurrent measurement
Albert Mathew, Vijith K. Pulikodan and Manoj A. G. Namboothiry
Appl. Phys. Lett. 121, 233102 (2022); https://doi.org/10.1063/5.0134254
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SOLUTION-PROCESSABLE ELECTRONICS AND PHOTONICS
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Intrinsic polarization-sensitive organic photodetector with self-assembled all-polymer heterojunction
Xuhao Luo, Yingying Xue, Juntao Wu, Wanzhu Cai, Daniela Täuber, Ivan Malovicho, Bogdan Sava, Guobiao Cen, Xing Lu, Chuanxi Zhao, Ivan G. Scheblykin, Jianhui Yu, Wenjie Mai, Feng Liu, Ergang Wang and Lintao Hou
Appl. Phys. Lett. 121, 233301 (2022); https://doi.org/10.1063/5.0128850
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DEVICE PHYSICS AND NANOTECHNOLOGY
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A memristor based on two-dimensional MoSe2/MoS2 heterojunction for synaptic device application
Ping Liu, Huiming Luo, Xiaomiao Yin, Xingfu Wang, Xuemin He, Jiangwei Zhu, Hongtao Xue, Weiwei Mao and Yong Pu
Appl. Phys. Lett. 121, 233501 (2022); https://doi.org/10.1063/5.0127880
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Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors
Nahid Sultan Al-Mamun, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren and Stephen Pearton
Appl. Phys. Lett. 121, 233502 (2022); https://doi.org/10.1063/5.0125481
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Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors
Wejdan S. AlGhamdi, Aiman Fakieh, Hendrik Faber, Yen-Hung Lin, Wei-Zhi Lin, Po-Yu Lu, Chien-Hao Liu, Khaled Nabil Salama and Thomas D. Anthopoulos
Appl. Phys. Lett. 121, 233503 (2022); https://doi.org/10.1063/5.0126935
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The clarification of leakage conduction mechanism of HfO2/SiNx stacked a-IGZO TFT and its variation at high temperature
Ruozheng Wang, Juan Wang, Gang Niu, Qiang Wei, Shengli Wu, Cui Yu and Hong-Xing Wang
Appl. Phys. Lett. 121, 233504 (2022); https://doi.org/10.1063/5.0115980
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ENERGY CONVERSION AND STORAGE
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Multiple tunnel diode peaks in I–V curves of a multijunction laser power converter
An-Cheng Wang, Jia-Jing Yin, Shu-Zhen Yu and Yu-Run Sun
Appl. Phys. Lett. 121, 233901 (2022); https://doi.org/10.1063/5.0109587
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Super hydrophilic, ultra bubble repellent substrate for pinhole free Dion–Jacobson perovskite solar cells
Wen Deng, Fang Wan, Xinxin Peng, Xiaoxue Ren, Jifei Wang, Nan Wu, Weiran Qin, Xiaohui Gao, Si Xiao, Lin Zhang, Bin Yang, Jun He, Yongbo Yuan and Yun Lin
Appl. Phys. Lett. 121, 233902 (2022); https://doi.org/10.1063/5.0127262
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QUANTUM TECHNOLOGIES
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OpenDecember 2022
Spectrally stable nitrogen-vacancy centers in diamond formed by carbon implantation into thin microstructures
V. Yurgens, A. Corazza, J. A. Zuber, M. Gruet, M. Kasperczyk, B. J. Shields, R. J. Warburton, Y. Fontana and P. Maletinsky
Appl. Phys. Lett. 121, 234001 (2022); https://doi.org/10.1063/5.0126669
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INTERDISCIPLINARY APPLIED PHYSICS
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Maximal absorption in ultrathin TiN films for microbolometer applications
Ting S. Luk, Guangping Xu, Willard Ross, John N. Nogan, Ethan A. Scott, Sergei Ivanov, Oana Niculescu, Oleg Mitrofanov and C. Thomas Harris
Appl. Phys. Lett. 121, 234101 (2022); https://doi.org/10.1063/5.0123671