PERSPECTIVES

Impurities and defects in 4H silicon carbide
Rong Wang; Yuanchao Huang; Deren Yang; Xiaodong Pi
Appl. Phys. Lett. 122, 180501 (2023) doi: https://doi.org/10.1063/5.0145350
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ADVANCED MATERIALS

Determination of short-range order in TiVNbHf(Al)
Michael Xu; Shaolou Wei; C. Cem Tasan; James M. LeBeau
Appl. Phys. Lett. 122, 181901 (2023) doi: https://doi.org/10.1063/5.0145289
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Ion migration induced bipolar diode effect and ferroelectricity modulation in CuInP2S6
Dongke Rong; Cheng Tian; Jie Xing; Qiao Jin; Fangyuan Ma; Guozhen Liu; Jie Qiu; Changchun Zhao; Huiying Hao; Jingjing Dong; Hao Liu; Youguo Shi; Er-Jia Guo
Appl. Phys. Lett. 122, 181902 (2023) doi: https://doi.org/10.1063/5.0149867
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SEMICONDUCTORS

Influence of intrinsic amorphous silicon passivation layer on the dark-state stability of SHJ cells
Honghua Zhang; Liping Zhang; Wenzhu Liu; Yinuo Zhou; Shihu Lan; Kai Jiang; Junlin Du; Anjun Han; Hui Zhao; Haichuan Zhang; Jianhua Shi; Fanying Meng; Zhengxin Liu
Appl. Phys. Lett. 122, 182101 (2023) doi: https://doi.org/10.1063/5.0144574
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High temperature UV photodetectors based on the negative differential resistance effect of WO3/diamond PN junctions
Lin Zhang; Shaoheng Cheng; Liying Wang; Kai Pei; Hongdong Li
Appl. Phys. Lett. 122, 182102 (2023) doi: https://doi.org/10.1063/5.0152394
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Photoelectric and pyroelectric performance modulated by the in-plane ferroelectric polarization in multi-functional α-In2Se3-based transistor
In Special Collection: Critical Issues on the 2D-material-based field-effect transistors
Chuanyang Cai; Jie Peng; Shiyu Ling; Pengfei Hou
Appl. Phys. Lett. 122, 182103 (2023) doi: https://doi.org/10.1063/5.0147013
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High mobility of intrinsic defects in α-Ga2O3
Alexander Azarov; Ji-Hyeon Park; Dae-Woo Jeon; Andrej Kuznetsov
Appl. Phys. Lett. 122, 182104 (2023) doi: https://doi.org/10.1063/5.0149870
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PHONONIC, ACOUSTIC, AND THERMAL PROPERTIES

Extended topological interface modes with tunable frequency in the piezoelectric phononic crystal
Peng Zhang; Han Jia; Yuzhen Yang; Jien Wu; Jun Yang
Appl. Phys. Lett. 122, 182201 (2023) doi: https://doi.org/10.1063/5.0136494
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Cation disorder and the charge ordering transition temperature in La1/3(Sr1-xCax)2/3FeO3−δ investigated by mechanical spectroscopy
D. Wei; X. N. Ying; X. M. Lu
Appl. Phys. Lett. 122, 182202 (2023) doi: https://doi.org/10.1063/5.0141739
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MAGNETICS AND SPINTRONICS

Concomitant modulation of interlayer exchange coupling and Gilbert damping in Fe/CoO with spin conductor Ag layer at interface
J. He; Z. R. Zhao; H. Xia; T. Li; E. Liang; G. Ni; J. Wang; C. X. Sheng; L. Y. Chen; Y. Z. Wu; H. B. Zhao
Appl. Phys. Lett. 122, 182401 (2023) doi: https://doi.org/10.1063/5.0146385
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SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS

Nb/a-Si/Nb Josephson junctions for high-density superconducting circuits
In Special Collection: Advances in Superconducting Logic
David I. Olaya; John Biesecker; Manuel A. Castellanos-Beltran; Adam J. Sirois; Peter F. Hopkins; Paul D. Dresselhaus; Samuel P. Benz
Appl. Phys. Lett. 122, 182601 (2023) doi: https://doi.org/10.1063/5.0148250
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Single-flux-quantum signal processors monolithically integrated with a superconducting nanostrip single-photon detector array
In Special Collection: Advances in Superconducting Logic
Shigeyuki Miyajima; Masahiro Yabuno; Shigehito Miki; Shuichi Nagasawa; Mutsuo Hidaka; Hirotaka Terai
Appl. Phys. Lett. 122, 182602 (2023) doi: https://doi.org/10.1063/5.0144808
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A flux-tunable YBa2Cu3O7 quantum interference microwave circuit
Kevin Uhl; Daniel Hackenbeck; Christoph Füger; Reinhold Kleiner; Dieter Koelle; Daniel Bothner
Appl. Phys. Lett. 122, 182603 (2023) doi: https://doi.org/10.1063/5.0146524
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DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

Improper ferroelectricity in ultrathin hexagonal ferrites films
Xin Li; Yu Yun; Xiaoshan Xu
Appl. Phys. Lett. 122, 182901 (2023) doi: https://doi.org/10.1063/5.0146420
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Spin–phonon interactions and magnetoelectric coupling in Co4 
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2
O9 (B = Nb, Ta)
K. Park; J. Kim; S. Choi; S. Fan; C. Kim; D. G. Oh; N. Lee; S.-W. Cheong; V. Kiryukhin; Y. J. Choi; D. Vanderbilt; J. H. Lee; J. L. Musfeldt
Appl. Phys. Lett. 122, 182902 (2023) doi: https://doi.org/10.1063/5.0137903
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LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS

Fractional mode charge of higher-order topological acoustic transport
Taotao Zheng; Hao Ge; Ziwei Long; Chudong Xu; Ming-Hui Lu
Appl. Phys. Lett. 122, 183101 (2023) doi: https://doi.org/10.1063/5.0144939
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DEVICE PHYSICS AND NANOTECHNOLOGY

NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices
Ming Xiao; Boyan Wang; Joseph Spencer; Yuan Qin; Matthew Porter; Yunwei Ma; Yifan Wang; Kohei Sasaki; Marko Tadjer; Yuhao Zhang
Appl. Phys. Lett. 122, 183501 (2023) doi: https://doi.org/10.1063/5.0142229
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A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation
In Special Collection: Electronic Noise: From Advanced Materials to Quantum Technologies
Tian Zhu; Xue-Feng Zheng; Tai-Xu Yin; Hao Zhang; Xiao-Hu Wang; Shao-Zhong Yue; Tan Wang; Tao Han; Xiao-Hua Ma; Yue Hao
Appl. Phys. Lett. 122, 183502 (2023) doi: https://doi.org/10.1063/5.0146638
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Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique
Christian Dorfer; Marianne E. Bathen; Salvatore Race; Piyush Kumar; Alexander Tsibizov; Judith Woerle; Ulrike Grossner
Appl. Phys. Lett. 122, 183503 (2023) doi: https://doi.org/10.1063/5.0142217
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