4.55 W continue-wave dual-end pumping of Er:Yb:YAl3(BO3)4 microchip laser at 1.5 μm
Wenwen Cheng; Tianshan Zhang; Zeqian Jiang; Gang Huang; Yongcheng Huang; Bingxuan Li; Zhanglang Lin; Yujin Chen; Yidong Huang; Yanfu Lin; Wenbin Liao; Ge Zhang
Appl. Phys. Lett. 123, 171101 (2023) https://doi.org/10.1063/5.0167529
Abstract
View articletitled, 4.55 W continue-wave dual-end pumping of Er:Yb:YAl3(BO3)4 microchip laser at 1.5 μm
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327 Gbps THz silicon photonic interconnect with sub-λ bends
Manoj Gupta; Nikhil Navaratna; Pascal Szriftgiser; Guillaume Ducournau; Ranjan Singh
Appl. Phys. Lett. 123, 171102 (2023) https://doi.org/10.1063/5.0168016
Abstract
View articletitled, 327 Gbps THz silicon photonic interconnect with sub-λ bends
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Suppression of polarization instability in ultrashort Fabry–Pérot fiber laser
Haijiao Xu; Yupeng Huang; Xuewen Chen; Wei Lin; Yanlong Li; Xu Hu; Yiheng Fan; Yang Yang; Chiyi Wei; Zihao Li; Liyu Chen; Zhijun Ma; Xiaoming Wei; Zhongmin Yang
Appl. Phys. Lett. 123, 171103 (2023) https://doi.org/10.1063/5.0171770
Abstract
View articletitled, Suppression of polarization instability in ultrashort Fabry–Pérot fiber laser
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Auxiliary physics-informed neural networks for forward, inverse, and coupled radiative transfer problems
R. Riganti; L. Dal Negro
Appl. Phys. Lett. 123, 171104 (2023) https://doi.org/10.1063/5.0167155
Abstract
View articletitled, Auxiliary physics-informed neural networks for forward, inverse, and coupled radiative transfer problems
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The effect of scattering instability induced by high intensity seed on backward Raman amplification
Jiajun Li; Xianzhi Wang; Zhaohua Wang; Xu Zhang; Jiawen Li; Zhiyi Wei
Appl. Phys. Lett. 123, 171105 (2023) https://doi.org/10.1063/5.0161058
Abstract
View articletitled, The effect of scattering instability induced by high intensity seed on backward Raman amplification
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SURFACES AND INTERFACES
Extending Schottky–Mott rule to van der Waals heterostructures of 2D Janus materials: Influence of intrinsic dipoles
Wu-Yu Chen; Lei Li; Tao Huang; Zi-Xuan Yang; Tao Zhang; Gui-Fang Huang; Wangyu Hu; Wei-Qing Huang
Appl. Phys. Lett. 123, 171601 (2023) https://doi.org/10.1063/5.0174594
Abstract
View articletitled, Extending Schottky–Mott rule to van der Waals heterostructures of 2D Janus materials: Influence of intrinsic dipoles
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METASURFACES AND METAMATERIALS
Thermal control of polarization of light with nonlocal plasmonic anisotropic metamaterials
Jingyi Wu; Anton Yu. Bykov; Alexey V. Krasavin; Mazhar E. Nasir; Anatoly V. Zayats
Appl. Phys. Lett. 123, 171701 (2023) https://doi.org/10.1063/5.0171298
Abstract
View articletitled, Thermal control of polarization of light with nonlocal plasmonic anisotropic metamaterials
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Improving absorption performance of resonant metamaterials using self-complementary shapes
Semere B. Gebrekidan; Martin Eser; Marcus Maeder; Steffen Marburg
Appl. Phys. Lett. 123, 171702 (2023) https://doi.org/10.1063/5.0173635
Abstract
View articletitled, Improving absorption performance of resonant metamaterials using self-complementary shapes
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Tunable bifunctional acoustic logic gates based on topological valley transport
Yong Ge; Binjie Shi; Ding Jia; Hong-xiang Sun; Haoran Xue; Shou-qi Yuan; Baile Zhang
Appl. Phys. Lett. 123, 171703 (2023) https://doi.org/10.1063/5.0172277
Abstract
View articletitled, Tunable bifunctional acoustic logic gates based on topological valley transport
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Multi-frequency and wide-angle nonreciprocity arising from non-uniform magnetic field
Jin Wang; Kin Hung Fung; Hui Yuan Dong; Zheng-Gao Dong
Appl. Phys. Lett. 123, 171704 (2023) https://doi.org/10.1063/5.0174704
Abstract
View articletitled, Multi-frequency and wide-angle nonreciprocity arising from non-uniform magnetic field
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ADVANCED MATERIALS
Thermal characterization of carbon-rich boron carbonitride foams for thermal management applications
Yahav Ben-Shimon; Anway Pradhan; Binyamin Glam; Natali Levin; Assaf Ya'akobovitz
Appl. Phys. Lett. 123, 171901 (2023) https://doi.org/10.1063/5.0167427
Abstract
View articletitled, Thermal characterization of carbon-rich boron carbonitride foams for thermal management applications
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Colossal anomalous Hall conductivity and topological Hall effect in ferromagnetic kagome metal Nd3Al
Durgesh Singh; Jadupati Nag; Sankararao Yadam; V. Ganesan; Aftab Alam; K. G. Suresh
Appl. Phys. Lett. 123, 171902 (2023) https://doi.org/10.1063/5.0159035
Abstract
View articletitled, Colossal anomalous Hall conductivity and topological Hall effect in ferromagnetic kagome metal Nd3Al
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SEMICONDUCTORS
Synergistic effect of interface engineering and bulk photovoltaic effect enhanced self-powered Ta2NiS5/α-In2Se3/WSe2 van der Waals heterojunction for photodetection
Shiwen Tan; Pengfei Hou
Appl. Phys. Lett. 123, 172101 (2023) https://doi.org/10.1063/5.0172813
Abstract
View articletitled, Synergistic effect of interface engineering and bulk photovoltaic effect enhanced self-powered Ta2NiS5/α-In2Se3/WSe2 van der Waals heterojunction for photodetection
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Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands
Stefan Zollner; Shivashankar R. Vangala; Vladimir L. Tassev; Duane Brinegar; Samuel Linser
Appl. Phys. Lett. 123, 172102 (2023) https://doi.org/10.1063/5.0173978
Abstract
View articletitled, Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands
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Demonstration of near-ideal Schottky contacts to Si-doped AlN
C. E. Quiñones; D. Khachariya; P. Bagheri; P. Reddy; S. Mita; R. Kirste; S. Rathkanthiwar; J. Tweedie; S. Pavlidis; E. Kohn; R. Collazo; Z. Sitar
Appl. Phys. Lett. 123, 172103 (2023) https://doi.org/10.1063/5.0174524
Abstract
View articletitled, Demonstration of near-ideal Schottky contacts to Si-doped AlN
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Statistical quantum conductance of porous and random alloys
Elham Sharafedini; Hossein Hamzehpour; Mohammad Alidoust
Appl. Phys. Lett. 123, 172104 (2023) https://doi.org/10.1063/5.0169462
Abstract
View articletitled, Statistical quantum conductance of porous and random alloys
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Mobility-enhanced normally off hydrogen-terminated diamond FET with low interface state density using Al2O3/Nd gate stack
In Special Collection: (Ultra)Wide-bandgap Semiconductors for Extreme Environment Electronics
Jianing Su; Wei Wang; Guoqing Shao; Genqiang Chen; Hong-Xing Wang
Appl. Phys. Lett. 123, 172105 (2023) https://doi.org/10.1063/5.0171832
Abstract
View articletitled, Mobility-enhanced normally off hydrogen-terminated diamond FET with low interface state density using Al2O3/Nd gate stack
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Elucidating the role of oxygen vacancies on the electrical conductivity of β
-Ga2O3 single-crystals
Maneesha Narayanan; Amit P. Shah; Sandip Ghosh; Arumugam Thamizhavel; Arnab Bhattacharya
Appl. Phys. Lett. 123, 172106 (2023) https://doi.org/10.1063/5.0158279
Abstract
View articletitled, Elucidating the role of oxygen vacancies on the electrical conductivity of -Ga2O3 single-crystals
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PHONONIC, ACOUSTIC, AND THERMAL PROPERTIES
A low-temperature hydrogen sensor based on an acoustic topological material
Zhen-Dong Duan; Zi-Jian Zhou; Shu Zhu; Wen-Qing Diao; Zheng Liu; Li Fan; Shu-Yi Zhang; Li-Ping Cheng; Xiao-Dong Xu
Appl. Phys. Lett. 123, 172201 (2023) https://doi.org/10.1063/5.0162618
Abstract
View articletitled, A low-temperature hydrogen sensor based on an acoustic topological material
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A sensitivity-enhanced all-optical probe for non-contact laser ultrasonic inspection
Zhongwen Cheng; Jinhao Yu; Bainian Long; Lvming Zeng; Xuanrong Ji
Appl. Phys. Lett. 123, 172202 (2023) https://doi.org/10.1063/5.0173995
Abstract
View articletitled, A sensitivity-enhanced all-optical probe for non-contact laser ultrasonic inspection
Supplementary Material