PHOTONICS AND OPTOELECTRONICS Cascade amplification of optical absorption on III–V semiconductors via plasmon-coupled graphene Hao Dai; Hongpei Wang; Huiyuan Chu; Yancheng Huang; Chaoqun Wei; Ziyang Zhang; Cheng Jiang Appl. Phys. Lett. 123, 221101 (2023) https://doi.org/10.1063/5.0180810 Abstract View articletitled, Cascade amplification of optical absorption on III–V semiconductors via plasmon-coupled graphene Open the PDFfor in another window Non-Hermitian higher-order topological corner states on the extended kagome lattice In Special Collection: Non-Hermitian Photonics Yiqun Zhang; Zhaoxian Su; Yongtian Wang; Lingling Huang Appl. Phys. Lett. 123, 221102 (2023) https://doi.org/10.1063/5.0180301 Abstract View articletitled, Non-Hermitian higher-order topological corner states on the extended kagome lattice Open the PDFfor in another window Controllable flatbands via non-Hermiticity In Special Collection: Non-Hermitian Photonics Shirong Lin; Yao Liang; Jingcheng Zhang; Mu Ku Chen; Din Ping Tsai Appl. Phys. Lett. 123, 221103 (2023) https://doi.org/10.1063/5.0174456 Abstract View articletitled, Controllable flatbands via non-Hermiticity Supplementary Material Open the PDFfor in another window Transparent conductive oxides and low-loss nitride-rich silicon waveguides as building blocks for neuromorphic photonics Jacek Gosciniak; Jacob B. Khurgin Appl. Phys. Lett. 123, 221104 (2023) https://doi.org/10.1063/5.0172601 Abstract View articletitled, Transparent conductive oxides and low-loss nitride-rich silicon waveguides as building blocks for neuromorphic photonics Open the PDFfor in another window Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs Akira Yoshikawa; Ziyi Zhang; Maki Kushimoto; Koji Aoto; Chiaki Sasaoka; Hiroshi Amano Appl. Phys. Lett. 123, 221105 (2023) https://doi.org/10.1063/5.0183320 Abstract View articletitled, Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs Open the PDFfor in another window Computational scaling in inverse photonic design through factorization caching Ahmet Onur Dasdemir; Victor Minden; Emir Salih Magden Appl. Phys. Lett. 123, 221106 (2023) https://doi.org/10.1063/5.0172019 Abstract View articletitled, Computational scaling in inverse photonic design through factorization caching Open the PDFfor in another window Resonant optical trapping of Janus nanoparticles in plasmonic nanoaperture Alemayehu Nana Koya; Longnan Li; Wei Li Appl. Phys. Lett. 123, 221107 (2023) https://doi.org/10.1063/5.0178300 Abstract View articletitled, Resonant optical trapping of Janus nanoparticles in plasmonic nanoaperture Supplementary Material Open the PDFfor in another window Hydrogen bonding switched symmetric and anti-symmetric vibrations SRS of –CH2 in aqueous DEG solution Ruqing Xue; Hua Du; Wei Zhang; Chenglin Sun; Aijun Li; Wenhui Fang; Zhiwei Men Appl. Phys. Lett. 123, 221108 (2023) https://doi.org/10.1063/5.0171248 Abstract View articletitled, Hydrogen bonding switched symmetric and anti-symmetric vibrations SRS of –CH2 in aqueous DEG solution Open the PDFfor in another window METASURFACES AND METAMATERIALS Supercavity mode in a single metallic resonator Rasmus E. Jacobsen; Samel Arslanagić Appl. Phys. Lett. 123, 221701 (2023) https://doi.org/10.1063/5.0174480 Abstract View articletitled, Supercavity mode in a single metallic resonator Supplementary Material Open the PDFfor in another window SEMICONDUCTORS Anisotropic optical characteristics of WS2/ReS2 heterostructures with broken rotational symmetry Xing Xie; Junnan Ding; Biao Wu; Haihong Zheng; Shaofei Li; Jun He; Zongwen Liu; Jian-Tao Wang; Yanping Liu Appl. Phys. Lett. 123, 222101 (2023) https://doi.org/10.1063/5.0170276 Abstract View articletitled, Anisotropic optical characteristics of WS2/ReS2 heterostructures with broken rotational symmetry Supplementary Material Open the PDFfor in another window High figure of merit spin polarized electron sources grown via MOCVD Benjamin Belfore; Adam Masters; Deewakar Poudel; Greg Blume; Stephen Polly; Erdong Wang; Seth M Hubbard; Marcy Stutzman; Joseph Michael Grames; Matt Poelker; Matt Grau; Sylvain Marsillac Appl. Phys. Lett. 123, 222102 (2023) https://doi.org/10.1063/5.0170106 Abstract View articletitled, High figure of merit spin polarized electron sources grown via MOCVD Open the PDFfor in another window Anharmonic phonon decay in CdSexTe1−x compound thin films Manzar Mushaf Yaqoob; Muhammad Faisal Iqbal; Deliang Wang Appl. Phys. Lett. 123, 222103 (2023) https://doi.org/10.1063/5.0180390 Abstract View articletitled, Anharmonic phonon decay in CdSexTe1−x compound thin films Supplementary Material Open the PDFfor in another window Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films James Spencer Lundh; Kenny Huynh; Michael Liao; William Olsen; Kaicheng Pan; Kohei Sasaki; Keita Konishi; Hannah N. Masten; Jennifer K. Hite; Michael A. Mastro; Nadeemullah A. Mahadik; Mark Goorsky; Akito Kuramata; Karl D. Hobart; Travis J. Anderson; Marko J. Tadjer Appl. Phys. Lett. 123, 222104 (2023) https://doi.org/10.1063/5.0174682 Abstract View articletitled, Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films Open the PDFfor in another window Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN P. Kruszewski; V. P. Markevich; A. R. Peaker; J. Plesiewicz; P. Prystawko; M. P. Halsall; L. Sun Appl. Phys. Lett. 123, 222105 (2023) https://doi.org/10.1063/5.0184701 Abstract View articletitled, Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN Open the PDFfor in another window Engineering lattice oxygen defects and polaronic transport in vanadium pentoxide via isovalent phosphorus doping Tathagata Sarkar; Saptak Majumder; Soumya Biswas; Sona S. Rose; Vinayak Kamble Appl. Phys. Lett. 123, 222106 (2023) https://doi.org/10.1063/5.0178546 Abstract View articletitled, Engineering lattice oxygen defects and polaronic transport in vanadium pentoxide via isovalent phosphorus doping Supplementary Material Open the PDFfor in another window PHONONIC, ACOUSTIC, AND THERMAL PROPERTIES Radiative thermal coats for passive temperature management Yongdi Dang; Yi Zhou; Yuxuan Li; Sen Zhang; Xinran Li; Yi Jin; Pankaj K. Choudhury; Jianbin Xu; Yungui Ma Appl. Phys. Lett. 123, 222201 (2023) https://doi.org/10.1063/5.0180035 Abstract View articletitled, Radiative thermal coats for passive temperature management Open the PDFfor in another window MAGNETICS AND SPINTRONICS Intrinsic magnetic properties of the layered antiferromagnet CrSBr Fangchao Long; Kseniia Mosina; René Hübner; Zdenek Sofer; Julian Klein; Slawomir Prucnal; Manfred Helm; Florian Dirnberger; Shengqiang Zhou Appl. Phys. Lett. 123, 222401 (2023) https://doi.org/10.1063/5.0175185 Abstract View articletitled, Intrinsic magnetic properties of the layered antiferromagnet CrSBr Supplementary Material Open the PDFfor in another window DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS Electrical conduction behavior in ferroelectric polymer-based composites incorporating metal halide perovskite Lingyu Zhang; Yuan Deng; Yao Wang Appl. Phys. Lett. 123, 222901 (2023) https://doi.org/10.1063/5.0172406 Abstract View articletitled, Electrical conduction behavior in ferroelectric polymer-based composites incorporating metal halide perovskite Supplementary Material Open the PDFfor in another window An analytical interpretation of the memory window in ferroelectric field-effect transistors Sijung Yoo; Duk-Hyun Choe; Hyun Jae Lee; Sanghyun Jo; Yun Sung Lee; Yoonsang Park; Ki-Hong Kim; Donghoon Kim; Seung-Geol Nam Appl. Phys. Lett. 123, 222902 (2023) https://doi.org/10.1063/5.0168515 Abstract View articletitled, An analytical interpretation of the memory window in ferroelectric field-effect transistors Open the PDFfor in another window LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS Interface atomic structures in a cadmium arsenide/III–V semiconductor heterostructure Guomin Zhu; Binghao Guo; Susanne Stemmer Appl. Phys. Lett. 123, 223101 (2023) https://doi.org/10.1063/5.0173777 Abstract View articletitled, Interface atomic structures in a cadmium arsenide/III–V semiconductor heterostructure Supplementary Material Open the PDFfor in another window Hall effect in the crystal using silicon nitride nanomembrane via contacts Mickey Martini; Tommaso Confalone; Yejin Lee; Bastian Rubrecht; Giuseppe Serpico; Sanaz Shokri; Christian N. Saggau; Domenico Montemurro; Valerii M. Vinokur; Anna Isaeva; Kornelius Nielsch; Nicola Poccia Appl. Phys. Lett. 123, 223102 (2023) https://doi.org/10.1063/5.0170335 Abstract View articletitled, Hall effect in the MnBi 2 Te 4 crystal using silicon nitride nanomembrane via contacts Open the PDFfor in another window Biaxial strain tuning of exciton energy and polarization in monolayer WS2 G. Kourmoulakis; A. Michail; I. Paradisanos; X. Marie; M. M. Glazov; B. Jorissen; L. Covaci; E. Stratakis; K. Papagelis; J. Parthenios; G. Kioseoglou Appl. Phys. Lett. 123, 223103 (2023) https://doi.org/10.1063/5.0167724 Abstract View articletitled, Biaxial strain tuning of exciton energy and polarization in monolayer WS2 Supplementary Material Open the PDFfor in another window Robustness of quantum spin Hall effect-inspired edge modes depending on C6 symmetry in topological diffusion systems K. Funayama; J. Hirotani; A. Miura; H. Tanaka Appl. Phys. Lett. 123, 223104 (2023) https://doi.org/10.1063/5.0173487 Abstract View articletitled, Robustness of quantum spin Hall effect-inspired edge modes depending on C6 symmetry in topological diffusion systems Supplementary Material Open the PDFfor in another window SOLUTION-PROCESSABLE ELECTRONICS AND PHOTONICS Self-sacrifice PbI2 seed layer-assisted crystal growth for improved perovskite thin films for efficient and stable transportation layer-free photodetectors Peiyu Cheng; Pengyu Chen; Mingming Chen; Huimin Zhang; Dawei Cao; Quan Wang Appl. Phys. Lett. 123, 223301 (2023) https://doi.org/10.1063/5.0179194 Abstract View articletitled, Self-sacrifice PbI2 seed layer-assisted crystal growth for improved perovskite thin films for efficient and stable transportation layer-free photodetectors Supplementary Material Open the PDFfor in another window DEVICE PHYSICS AND NANOTECHNOLOGY Memristive devices with short-term and long-term memory behaviors for processing temporal information Seung Jun Ki; Jisoo Kim; Mingze Chen; Xiaogan Liang Appl. Phys. Lett. 123, 223501 (2023) https://doi.org/10.1063/5.0175200 Abstract View articletitled, Memristive devices with short-term and long-term memory behaviors for processing temporal information Supplementary Material Open the PDFfor in another window