EDITORIALS

Opinions on imaging and cutting-edge developments in light microscopy for biomedical applications 
In Special Collection: Advances in Optical Microscopy for Bioimaging
Kirti Prakash; Rainer Heintzmann; Uri Manor; Carlas Smith
Appl. Phys. Lett. 123, 260401 (2023) https://doi.org/10.1063/5.0188763
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View articletitled, Opinions on imaging and cutting-edge developments in light microscopy for biomedical applications
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PERSPECTIVES

Skyrmion qubits: Challenges for future quantum computing applications 
Christina Psaroudaki; Elias Peraticos; Christos Panagopoulos
Appl. Phys. Lett. 123, 260501 (2023) https://doi.org/10.1063/5.0177864
Abstract
View articletitled, Skyrmion qubits: Challenges for future quantum computing applications
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Quantum sensors in diamonds for magnetic resonance spectroscopy: Current applications and future prospects 
Roberto Rizzato; Nick R. von Grafenstein; Dominik B. Bucher
Appl. Phys. Lett. 123, 260502 (2023) https://doi.org/10.1063/5.0169027
Abstract
View articletitled, Quantum sensors in diamonds for magnetic resonance spectroscopy: Current applications and future prospects
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PHOTONICS AND OPTOELECTRONICS

Comparison of quantum well structures for room temperature continuous wave 980 nm lasers grown on (001) Si by MOCVD 
Jie Huang; Qi Lin; Wei Luo; Wen Gu; Liying Lin; Kei May Lau
Appl. Phys. Lett. 123, 261101 (2023) https://doi.org/10.1063/5.0179895
Abstract
View articletitled, Comparison of quantum well structures for room temperature continuous wave 980 nm lasers grown on (001) Si by MOCVD
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Multiple visible wavelength switchable cascaded self-Raman laser based on selective wave-mixing mechanism 
Yanmin Duan; Haiyong Zhu; Ge Zhang; Dingyuan Tang
Appl. Phys. Lett. 123, 261102 (2023) https://doi.org/10.1063/5.0180952
Abstract
View articletitled, Multiple visible wavelength switchable cascaded self-Raman laser based on selective wave-mixing mechanism
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Monolithic III-nitride photonic circuit on a single chip 
Mingyuan Xie; Yan Jiang; Xumin Gao; Xianwu Tang; Jialei Yuan; Zheng Shi; Yongjin Wang
Appl. Phys. Lett. 123, 261103 (2023) https://doi.org/10.1063/5.0178382
Abstract
View articletitled, Monolithic III-nitride photonic circuit on a single chip
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Ultraviolet-sensitive and power-efficient oxide phototransistor enabled by nanometer-scale thickness engineering of InZnO semiconductor and gate bias modulation 
In Special Collection: Organic and Hybrid Photodetectors
Xuan Zhang; Eun Chong Ju; Jong Min Lee; Sung Kyu Park; Sung Woon Cho
Appl. Phys. Lett. 123, 261104 (2023) https://doi.org/10.1063/5.0185490
Abstract
View articletitled, Ultraviolet-sensitive and power-efficient oxide phototransistor enabled by nanometer-scale thickness engineering of InZnO semiconductor and gate bias modulation
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Spectral routers for snapshot multispectral imaging 
Peter B. Catrysse; Shanhui Fan
Appl. Phys. Lett. 123, 261105 (2023) https://doi.org/10.1063/5.0176587
Abstract
View articletitled, Spectral routers for snapshot multispectral imaging
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Characterization of solar cell passivating contacts using time-of-flight elastic recoil detection analysis 
Yifu Shi; Matthew Wright; Matthew K. Sharpe; Callum D. McAleese; Jana-Isabelle Polzin; Xinya Niu; Zimo Zhao; Stephen M. Morris; Ruy S. Bonilla
Appl. Phys. Lett. 123, 261106 (2023) https://doi.org/10.1063/5.0174131
Abstract
View articletitled, Characterization of solar cell passivating contacts using time-of-flight elastic recoil detection analysis
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SURFACES AND INTERFACES

Optoelectronic properties of the Sb/III-Sb interface induced by laser photooxidation 
P. A. Alekseev; I. A. Eliseyev; V. V. Romanov; K. D. Moiseev; E. V. Kunitsyna; B. R. Borodin; V. A. Sharov; A. N. Smirnov; V. Yu. Davydov
Appl. Phys. Lett. 123, 261601 (2023) https://doi.org/10.1063/5.0164062
Abstract
View articletitled, Optoelectronic properties of the Sb/III-Sb interface induced by laser photooxidation
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Precision sub-monolayer manipulation of diamond surface chemistry using laser direct write oxidation in air 
Mojtaba Moshkani; James E. Downes; Richard P. Mildren
Appl. Phys. Lett. 123, 261602 (2023) https://doi.org/10.1063/5.0172567
Abstract
View articletitled, Precision sub-monolayer manipulation of diamond surface chemistry using laser direct write oxidation in air
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Nanoscale friction of high entropy alloy sulfide thin films in comparison with molybdenum disulfide 
In Special Collection: Era of Entropy: Synthesis, Structure, Properties, and Applications of High-Entropy Materials
Gokay Adabasi; Aditya Deshpande; Koichi Tanaka; Joshua Ancheta; Emmanuel Maldonado; Mehmet Özdoğan; Suneel Kodambaka; Mehmet Z. Baykara
Appl. Phys. Lett. 123, 261603 (2023) https://doi.org/10.1063/5.0180716
Abstract
View articletitled, Nanoscale friction of high entropy alloy sulfide thin films in comparison with molybdenum disulfide
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ADVANCED MATERIALS

Optimized electrical properties of p-type field-effect transistors based on WSe2 grown at moderate temperatures 
Xin Wang; Xiong Xiong; Xinhang Shi; Chengru Gu; Yanqing Wu
Appl. Phys. Lett. 123, 261901 (2023) https://doi.org/10.1063/5.0184707
Abstract
View articletitled, Optimized electrical properties of <em>p</em>-type field-effect transistors based on WSe<sub>2</sub> grown at moderate temperatures
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SEMICONDUCTORS

The limit of anisotropic epitaxial lateral overgrowth in heteroepitaxial systems 
Yiwen Zhang; Danhao Ma; Yiding Lin; Jurgen Michel; Rui-Tao Wen
Appl. Phys. Lett. 123, 262101 (2023) https://doi.org/10.1063/5.0178219
Abstract
View articletitled, The limit of anisotropic epitaxial lateral overgrowth in heteroepitaxial systems
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Topological Mott transistor with high current density based on hydrogen-terminated diamond 
Hyun-Tak Kim; M. M. Qazilbash
Appl. Phys. Lett. 123, 262102 (2023) https://doi.org/10.1063/5.0177628
Abstract
View articletitled, Topological Mott transistor with high current density based on hydrogen-terminated diamond
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On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes 
J. Lang; F. J. Xu; J. M. Wang; L. S. Zhang; C. Ji; X. Q. Guo; C. Z. Ji; Z. Y. Zhang; F. Y. Tan; X. Z. Fang; X. N. Kang; X. L. Yang; N. Tang; X. Q. Wang; W. K. Ge; B. Shen
Appl. Phys. Lett. 123, 262103 (2023) https://doi.org/10.1063/5.0175872
Abstract
View articletitled, On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes
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Capacitive crosstalk in gate-based dispersive sensing of spin qubits 
Eoin G. Kelly; Alexei Orekhov; Nico W. Hendrickx; Matthias Mergenthaler; Felix J. Schupp; Stephan Paredes; Rafael S. Eggli; Andreas V. Kuhlmann; Patrick Harvey-Collard; Andreas Fuhrer; Gian Salis
Appl. Phys. Lett. 123, 262104 (2023) https://doi.org/10.1063/5.0177857
Abstract
View articletitled, Capacitive crosstalk in gate-based dispersive sensing of spin qubits
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Strain effects on Auger–Meitner recombination in silicon 
Kyle Bushick; Emmanouil Kioupakis
Appl. Phys. Lett. 123, 262105 (2023) https://doi.org/10.1063/5.0176950
Abstract
View articletitled, Strain effects on Auger–Meitner recombination in silicon
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Photoluminescence of bulk α-In2Se3 crystals irradiated by high-energy electrons 
A. D. Lobanov; M. A. Sulimov; D. I. Radzivonchik; M. N. Sarychev; V. Yu. Ivanov; T. V. Kuznetsova
Appl. Phys. Lett. 123, 262106 (2023) https://doi.org/10.1063/5.0180807
Abstract
View articletitled, Photoluminescence of bulk <strong><em>α</em></strong>-In<sub>2</sub>Se<sub>3</sub> crystals irradiated by high-energy electrons
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Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors 
In Special Collection: (Ultra)Wide-bandgap Semiconductors for Extreme Environment Electronics
Yingjie Wang; Sen Huang; Qimeng Jiang; Xinhua Wang; Zhongchen Ji; Jie Fan; Haibo Yin; Ke Wei; Xinyu Liu; Qian Sun; Kevin J. Chen
Appl. Phys. Lett. 123, 262107 (2023) https://doi.org/10.1063/5.0171505
Abstract
View articletitled, Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors
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MAGNETICS AND SPINTRONICS

Growth of epitaxial (100)-oriented rare-earth nitrides on (100)LaAlO3 
E.-M. Anton; E. Trewick; W. F. Holmes-Hewett; J. R. Chan; J. F. McNulty; T. Butler; B. J. Ruck; F. Natali
Appl. Phys. Lett. 123, 262401 (2023) https://doi.org/10.1063/5.0186522
Abstract
View articletitled, Growth of epitaxial (100)-oriented rare-earth nitrides on (100)LaAlO<sub>3</sub>
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Enhanced spin Hall effect at high temperature in non-centrosymmetric silicide TaSi2 driven by Berry phase monopoles 
Ken Ishida; Takanori Shirokura; Pham Nam Hai
Appl. Phys. Lett. 123, 262402 (2023) https://doi.org/10.1063/5.0165333
Abstract
View articletitled, Enhanced spin Hall effect at high temperature in non-centrosymmetric silicide TaSi<sub>2</sub> driven by Berry phase monopoles
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CHORUS

Spin–orbit torques and magnetization switching in Gd/Fe multilayers generated by current injection in NiCu alloys 
Federica Nasr; Federico Binda; Charles-Henri Lambert; Giacomo Sala; Paul Noël; Pietro Gambardella
Appl. Phys. Lett. 123, 262403 (2023) https://doi.org/10.1063/5.0178878
Abstract
View articletitled, Spin–orbit torques and magnetization switching in Gd/Fe multilayers generated by current injection in NiCu alloys
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DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

Vortex switching in epitaxial nanodot under uniform electric field: The effect of misfit strain 
Shilong Feng; Shuai Yuan; Wenbo Ma; Ye Ji; Yulan Liu; Biao Wang
Appl. Phys. Lett. 123, 262901 (2023) https://doi.org/10.1063/5.0176112
Abstract
View articletitled, Vortex switching in epitaxial nanodot under uniform electric field: The effect of misfit strain
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Magneto-electric coupling beyond van der Waals interaction in two-dimensional multiferroic heterostructures 
Chao Jin; Chang Liu; Fengzhu Ren; Bing Wang; Minglei Jia; Qinfen Gu
Appl. Phys. Lett. 123, 262902 (2023) https://doi.org/10.1063/5.0180680
Abstract
View articletitled, Magneto-electric coupling beyond van der Waals interaction in two-dimensional multiferroic heterostructures
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LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS

Cross-domain growth and angle-dependent interlayer coupling of twisted bilayer MoS2 
Jie Lu; Miaomiao Zheng; Jinxin Liu; Yian Qu; Gaoxiang Lin; Yangbo Chen; Donghao Xu; Mingyuan Lin; Yinghui Zhou; Mengyan Dai; Yufeng Zhang; Xueao Zhang; Weiwei Cai
Appl. Phys. Lett. 123, 263101 (2023) https://doi.org/10.1063/5.0177357
Abstract
View articletitled, Cross-domain growth and angle-dependent interlayer coupling of twisted bilayer MoS<sub>2</sub>
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DEVICE PHYSICS AND NANOTECHNOLOGY

Effective electrical conductivity of random resistor networks generated using a Poisson–Voronoi tessellation 
Yuri Yu Tarasevich; Irina V. Vodolazskaya; Andrei V. Eserkepov
Appl. Phys. Lett. 123, 263501 (2023) https://doi.org/10.1063/5.0181092
Abstract
View articletitled, Effective electrical conductivity of random resistor networks generated using a Poisson–Voronoi tessellation
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High-efficiency edge couplers enabled by vertically tapering on lithium-niobate photonic chips 
Di Jia; Qiang Luo; Chen Yang; Rui Ma; Xuanyi Yu; Feng Gao; Qifan Yang; Fang Bo; Guoquan Zhang; Jingjun Xu
Appl. Phys. Lett. 123, 263502 (2023) https://doi.org/10.1063/5.0184899
Abstract
View articletitled, High-efficiency edge couplers enabled by vertically tapering on lithium-niobate photonic chips
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Two‐dimensional α-In2Se3 memory devices from resistive switching to synaptic plasticity 
Ting Ma; Shuangshuang Han; Di Yang; Yun Ye; Ying Liu; Zhitao Shen; Fumin Li; Huilin Li; Chong Chen
Appl. Phys. Lett. 123, 263503 (2023) https://doi.org/10.1063/5.0180935
Abstract
View articletitled, Two‐dimensional <strong><em>α</em></strong>-In<sub>2</sub>Se<sub>3</sub> memory devices from resistive switching to synaptic plasticity
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Capacitance–voltage extraction method for the deep-level defect distribution in organic photodiode 
Wencai Zuo; Sai Liu; Haoyang Li; Lianjie Zhang; Weijing Wu; Junwu Chen; Junbiao Peng
Appl. Phys. Lett. 123, 263504 (2023) https://doi.org/10.1063/5.0179058
Abstract
View articletitled, Capacitance–voltage extraction method for the deep-level defect distribution in organic photodiode
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A tunable high-Q flexible ferroelectric film capacitor for GHz RF applications 
Feilong Mao; Yongqi Hou; Yifan Zhu; Haohan Zeng; Hui Zhang
Appl. Phys. Lett. 123, 263505 (2023) https://doi.org/10.1063/5.0173884
Abstract
View articletitled, A tunable high-Q flexible ferroelectric film capacitor for GHz RF applications
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Characteristics of magnetic field sensor utilizing Co-based Schottky contacts 
Yue Tan; Gui-fang Li; Yun Zhang; Chuhan Gao; Yongqian Du; Yinghao Chen; Jiezhang Luo; Dong Chen; Shibin Liu
Appl. Phys. Lett. 123, 263506 (2023) https://doi.org/10.1063/5.0182393
Abstract
View articletitled, Characteristics of magnetic field sensor utilizing Co-based Schottky contacts
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Direction-sensitive graphene flow sensor 
P. Kaźmierczak; J. Binder; K. Boryczko; T. Ciuk; W. Strupiński; R. Stępniewski; A. Wysmołek
Appl. Phys. Lett. 123, 263507 (2023) https://doi.org/10.1063/5.0171880
Abstract
View articletitled, Direction-sensitive graphene flow sensor
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α-In2Se3-based heterojunction photodetector using Nb-doped MoS2 
Xiurui Lv; Guipeng Liu; Guijuan Zhao; Linsheng Liu; Jianhong Yang
Appl. Phys. Lett. 123, 263508 (2023) https://doi.org/10.1063/5.0176800
Abstract
View articletitled, <strong><em>α</em></strong>-In<sub>2</sub>Se<sub>3</sub>-based heterojunction photodetector using Nb-doped MoS<sub>2</sub>
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Tunable nonlinear damping in MoS2 nanoresonator 
Parmeshwar Prasad; Nishta Arora; A. K. Naik
Appl. Phys. Lett. 123, 263509 (2023) https://doi.org/10.1063/5.0177422
Abstract
View articletitled, Tunable nonlinear damping in MoS<sub>2</sub> nanoresonator
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QUANTUM TECHNOLOGIES

Continuous broadband microwave electric field measurement in Rydberg atoms based on the DC Stark effect 
Kang Ouyang; Yuansheng Shi; Mingwei Lei; Meng Shi
Appl. Phys. Lett. 123, 264001 (2023) https://doi.org/10.1063/5.0186065
Abstract
View articletitled, Continuous broadband microwave electric field measurement in Rydberg atoms based on the DC Stark effect
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Heralded and robust W-state generation for distant superconducting qubits with practical microwave pulse scattering 
Zehui Guo; Zhihao Xie; Yimin Wang; Zhenhua Li; Tao Li
Appl. Phys. Lett. 123, 264002 (2023) https://doi.org/10.1063/5.0189377
Abstract
View articletitled, Heralded and robust <em>W</em>-state generation for distant superconducting qubits with practical microwave pulse scattering
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Robust diamond-embedded microwave antenna for optimizing quantum sensing using nitrogen-vacancy center ensembles 
Yuhang Guo; Jiaxin Zhao; Changfeng Weng; Shengran Lin; Yuanjie Yang; Wei Zhu; Liren Lou; Guanzhong Wang
Appl. Phys. Lett. 123, 264003 (2023) https://doi.org/10.1063/5.0185262
Abstract
View articletitled, Robust diamond-embedded microwave antenna for optimizing quantum sensing using nitrogen-vacancy center ensembles
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Addressing the constraints of turbulence-free ghost imaging using photon number fluctuation correlations in the time domain 
Deyang Duan; Qiang Gao; Yunjie Xia
Appl. Phys. Lett. 123, 264004 (2023) https://doi.org/10.1063/5.0185836
Abstract
View articletitled, Addressing the constraints of turbulence-free ghost imaging using photon number fluctuation correlations in the time domain
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INTERDISCIPLINARY APPLIED PHYSICS

Battery-less luminance sensor biomimicking human sensory nervous system 
S. Yamada; H. Toshiyoshi
Appl. Phys. Lett. 123, 264101 (2023) https://doi.org/10.1063/5.0181949
Abstract
View articletitled, Battery-less luminance sensor biomimicking human sensory nervous system
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CHORUS

Field reversal in low pressure, unmagnetized radio frequency capacitively coupled argon plasma discharges 
In Special Collection: Plasma Sources for Advanced Semiconductor Applications
De-Qi Wen; Janez Krek; Jon Tomas Gudmundsson; Emi Kawamura; Michael A Lieberman; Peng Zhang; John P Verboncoeur
Appl. Phys. Lett. 123, 264102 (2023) https://doi.org/10.1063/5.0179467
Abstract
View articletitled, Field reversal in low pressure, unmagnetized radio frequency capacitively coupled argon plasma discharges
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