PERSPECTIVES

Ferroelectric artificial synapses for high-performance neuromorphic computing: Status, prospects, and challenges 
Le Zhao; Hong Fang; Jie Wang; Fang Nie; Rongqi Li; Yuling Wang; Limei Zheng
Appl. Phys. Lett. 124, 030501 (2024) https://doi.org/10.1063/5.0165029
Abstract
View articletitled, Ferroelectric artificial synapses for high-performance neuromorphic computing: Status, prospects, and challenges
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PHOTONICS AND OPTOELECTRONICS

Photonic antichiral edge states induced by magnetic surface plasmon resonance 
Huabing Wu; Kai Xu; Yuancheng Shi; Ping Chen; Yin Poo; Shiyang Liu; Rui-Xin Wu
Appl. Phys. Lett. 124, 031101 (2024) https://doi.org/10.1063/5.0174435
Abstract
View articletitled, Photonic antichiral edge states induced by magnetic surface plasmon resonance
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High quenching concentration of the CaLuAlO4:Er3+ upconversion phosphor with short-range energy migration 
Tian Luo; Yujie Sun; Ruonan Wang; Xincheng Gong; Ruitong Song; Changchun Ding; Junshan Hu; Hao Fu
Appl. Phys. Lett. 124, 031102 (2024) https://doi.org/10.1063/5.0175020
Abstract
View articletitled, High quenching concentration of the CaLuAlO<sub>4</sub>:Er<sup>3<strong>+</strong></sup> upconversion phosphor with short-range energy migration
Supplementary Material
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Brillouin lasing in microspheres coupled with silicon subwavelength grating waveguides 
Linfeng Yu; Chukun Huang; Haotian Shi; Qiang Huang; Junqiang Sun
Appl. Phys. Lett. 124, 031103 (2024) https://doi.org/10.1063/5.0179090
Abstract
View articletitled, Brillouin lasing in microspheres coupled with silicon subwavelength grating waveguides
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Multiple data streams over a single optical path 
In Special Collection: Organic and Hybrid Photodetectors
Kang Fu; Jianwei Fu; Binju Wang; Jiabin Yan; Pengzhan Liu; Xiangyang Ji; Hongbo Zhu; Yongjin Wang
Appl. Phys. Lett. 124, 031104 (2024) https://doi.org/10.1063/5.0182730
Abstract
View articletitled, Multiple data streams over a single optical path
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Investigation of In2SexOy/In2Se3/Si dual-junction photodiode for self-powered broadband photodetection 
Kuangkuang Li; Kang Ling; Wenbo Li; Xingzhao Liu
Appl. Phys. Lett. 124, 031105 (2024) https://doi.org/10.1063/5.0188557
Abstract
View articletitled, Investigation of In<sub>2</sub>Se<sub>x</sub>O<sub>y</sub>/In<sub>2</sub>Se<sub>3</sub>/Si dual-junction photodiode for self-powered broadband photodetection
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Thermal transport and optical anisotropy in CVD grown large area few-layer MoS2 over an FTO substrate 
Ankita Singh; Rohit Kumar Gupta; Ashish Kumar Mishra
Appl. Phys. Lett. 124, 031106 (2024) https://doi.org/10.1063/5.0180404
Abstract
View articletitled, Thermal transport and optical anisotropy in CVD grown large area few-layer MoS<sub>2</sub> over an FTO substrate
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Armchair zinc chalcogenide nanoribbons for high-performance photodetectors: A computational study 
Shuang Meng; Jia Zhou
Appl. Phys. Lett. 124, 031107 (2024) https://doi.org/10.1063/5.0171954
Abstract
View articletitled, Armchair zinc chalcogenide nanoribbons for high-performance photodetectors: A computational study
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SURFACES AND INTERFACES

Realizing an ultralow thermal conductivity via interfacial scattering and rational-electronic band reformation in p-type Mg3Sb2 
S. Priyadharshini; V. Vijay; S. Kamalakannan; J. Archana; M. Navaneethan
Appl. Phys. Lett. 124, 031601 (2024) https://doi.org/10.1063/5.0180722
Abstract
View articletitled, Realizing an ultralow thermal conductivity via interfacial scattering and rational-electronic band reformation in <em>p</em>-type Mg<sub>3</sub>Sb<sub>2</sub>
Supplementary Material
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METASURFACES AND METAMATERIALS

Elimination of reflection losses in gradient metasurface optical elements 
Mengdi Sun; Pieter G. Kik
Appl. Phys. Lett. 124, 031701 (2024) https://doi.org/10.1063/5.0177947
Abstract
View articletitled, Elimination of reflection losses in gradient metasurface optical elements
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Topological polarization singular enables multiple-system excellent circular dichroism via chiral bound states in the continuum with all-dielectric metasurfaces 
Shu Zong; Jiafei Chen; Shijie Cai; Xiaoshan Liu; Guiqiang Liu; Jing Chen; Chaojun Tang; Wei Du; Zhengqi Liu
Appl. Phys. Lett. 124, 031702 (2024) https://doi.org/10.1063/5.0180635
Abstract
View articletitled, Topological polarization singular enables multiple-system excellent circular dichroism via chiral bound states in the continuum with all-dielectric metasurfaces
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ADVANCED MATERIALS

Digital twins and deep learning segmentation of defects in monolayer MX2 phases 
Addis S. Fuhr; Panchapakesan Ganesh; Rama K. Vasudevan; Kevin M. Roccapriore; Bobby G. Sumpter
Appl. Phys. Lett. 124, 031901 (2024) https://doi.org/10.1063/5.0181080
Abstract
View articletitled, Digital twins and deep learning segmentation of defects in monolayer MX<sub>2</sub> phases
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SEMICONDUCTORS

Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate 
Sean Knight; Steffen Richter; Alexis Papamichail; Megan Stokey; Rafał Korlacki; Vallery Stanishev; Philipp Kühne; Mathias Schubert; Vanya Darakchieva
Appl. Phys. Lett. 124, 032101 (2024) https://doi.org/10.1063/5.0177304
Abstract
View articletitled, Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
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MAGNETICS AND SPINTRONICS

Realizing polarization-dependent unidirectional magnon channel in antiferromagnetic domain wall 
In Special Collection: Magnonics
Zhi-xiong Li; Xiang Liu; Zhi-ming Yan; Xi-guang Wang; Guang-hua Guo
Appl. Phys. Lett. 124, 032401 (2024) https://doi.org/10.1063/5.0181317
Abstract
View articletitled, Realizing polarization-dependent unidirectional magnon channel in antiferromagnetic domain wall
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Interfacial engineering to manipulate the effective spin Hall angle of perpendicularly magnetized systems 
Saikat Maji; Kartikey Pratap Chauhan; Ishan Bhat; Ankan Mukhopadhyay; Soubhik Kayal; P. S. Anil Kumar
Appl. Phys. Lett. 124, 032402 (2024) https://doi.org/10.1063/5.0181184
Abstract
View articletitled, Interfacial engineering to manipulate the effective spin Hall angle of perpendicularly magnetized systems
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DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

Domain structures of PbTiO3 and Pb(Zr,Ti)O3 thin films controlled by tensile strain induced by a Sr(Zr,Ti)O3 buffer layer 
Tomohide Morikawa; Masanori Kodera; Takao Shimizu; Keisuke Ishihama; Yoshitaka Ehara; Osami Sakata; Hiroshi Funakubo
Appl. Phys. Lett. 124, 032901 (2024) https://doi.org/10.1063/5.0180449
Abstract
View articletitled, Domain structures of PbTiO<sub>3</sub> and Pb(Zr,Ti)O<sub>3</sub> thin films controlled by tensile strain induced by a Sr(Zr,Ti)O<sub>3</sub> buffer layer
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Proton doping enhanced flexoelectricity and photocurrent in hydrogen-charged TiO2 
Z. L. Wang; Yangshi Jin; Chun Hung Suen; Chenyue Mao; Xiangnan Gong; Jiangping Ma; J. W. Hong; F. Zhang; Chi-Ho Wong; W. P. Chen; X. Y. Zhou; Ji-Yan Dai
Appl. Phys. Lett. 124, 032902 (2024) https://doi.org/10.1063/5.0180626
Abstract
View articletitled, Proton doping enhanced flexoelectricity and photocurrent in hydrogen-charged TiO<sub>2</sub>
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LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS

Low-temperature synthesis of uniform monolayer molybdenum disulfide films 
Donghao Xu; Jie Lu; Gaoxiang Lin; Miaomiao Zheng; Yangbo Chen; Gesong Miao; Yinghui Zhou; Weiwei Cai; Yufeng Zhang; Yan Wang; Xueao Zhang
Appl. Phys. Lett. 124, 033101 (2024) https://doi.org/10.1063/5.0180434
Abstract
View articletitled, Low-temperature synthesis of uniform monolayer molybdenum disulfide films
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Anomalous Hall effect and Fermi surface reconstruction in topological antiferromagnet candidate GdAuPb 
Yonglai Liu; Xitong Xu; Yuqing Huang; Miao He; Haitian Zhao; Qingqi Zeng; Youming Zou; Chuanying Xi; Shuang Jia; Zhe Qu
Appl. Phys. Lett. 124, 033102 (2024) https://doi.org/10.1063/5.0181680
Abstract
View articletitled, Anomalous Hall effect and Fermi surface reconstruction in topological antiferromagnet candidate GdAuPb
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Robust valley quantum coherence in synthetic 3R-phase MoS2: A material for future valley based devices 
Ramesh Rajarapu; Prahalad Kanti Barman; Bubunu Biswal; Saroj Poudyal; Renu Yadav; Mrinal Deka; Wahidur Rahman; Anusree S; Pramoda K. Nayak; Abhishek Misra
Appl. Phys. Lett. 124, 033103 (2024) https://doi.org/10.1063/5.0187119
Abstract
View articletitled, Robust valley quantum coherence in synthetic <em>3R</em>-phase MoS<sub>2</sub>: A material for future valley based devices
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Spectroscopy of monolayer and multilayer tungsten disulfide under high pressure 
JieHuan Luo; ChenKai Li; JingYi Liu; YaoYao Liu; WeiHeng Xiao; RongHao Zheng; Qunfei Zheng; Jun Han; Tong Zou; WenJing Cheng; XiaoDong Yao; Ying Liu; Jinlong Zhu
Appl. Phys. Lett. 124, 033104 (2024) https://doi.org/10.1063/5.0188140
Abstract
View articletitled, Spectroscopy of monolayer and multilayer tungsten disulfide under high pressure
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SOLUTION-PROCESSABLE ELECTRONICS AND PHOTONICS

Cost-effective high-performance quantum dot photodetectors with dual polythiophene hole transporting layers 
In Special Collection: Organic and Hybrid Photodetectors
Junjiang Wu; Mengyuan Gao; Jingjing Wang; Saimeng Li; Kai Zhang; Wenchao Zhao; Sunsun Li; Vakhobjon Kuvondikov; Hang Yin; Long Ye
Appl. Phys. Lett. 124, 033301 (2024) https://doi.org/10.1063/5.0172691
Abstract
View articletitled, Cost-effective high-performance quantum dot photodetectors with dual polythiophene hole transporting layers
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INTERDISCIPLINARY APPLIED PHYSICS

Influence of a laser intensity on EUV brightness and ion speed from a laser-assisted discharge-produced plasma 
In Special Collection: Plasma Sources for Advanced Semiconductor Applications
F. Sato; A. Nagano; Y. Teramoto
Appl. Phys. Lett. 124, 034101 (2024) https://doi.org/10.1063/5.0174499
Abstract
View articletitled, Influence of a laser intensity on EUV brightness and ion speed from a laser-assisted discharge-produced plasma
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Droplet pair breakup in microfluidic expansion channel 
Yihan Kuang; Tao Deng; Yingzhou Huang; Liyu Liu; Guo Chen
Appl. Phys. Lett. 124, 034102 (2024) https://doi.org/10.1063/5.0183413
Abstract
View articletitled, Droplet pair breakup in microfluidic expansion channel
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ERRATA
Erratum: “Thermal conductivity switching for Y–Mg alloy hydrides thin film due to hydrogenation/dehydrogenation reactions using dilute H2 gas” [Appl. Phys. Lett. 123, 232201 (2023)] 
Yuichiro Yamashita; Kosuke Sugimoto; Takashi Yagi; Makoto Kashiwagi; Satoshi Takeya; Yuki Oguchi; Naoyuki Taketoshi; Yuzo Shigesato
Appl. Phys. Lett. 124, 039901 (2024) https://doi.org/10.1063/5.0194015
Extract
View articletitled, Erratum: “Thermal conductivity switching for Y–Mg alloy hydrides thin film due to hydrogenation/dehydrogenation reactions using dilute H<sub>2</sub> gas” [Appl. Phys. Lett. <strong>123</strong>, 232201 (2023)]
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Erratum: “Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. 121, 172102 (2022)] 
Hanghai Du; Zhihong Liu; Lu Hao; Weichuan Xing; Weihang Zhang; Hong Zhou; Jincheng Zhang; Yue Hao
Appl. Phys. Lett. 124, 039902 (2024) https://doi.org/10.1063/5.0195385
Extract
View articletitled, Erratum: “Low ohmic contact resistivity realized by <em>in situ</em> SiN<sub>x</sub> insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. <strong>121</strong>, 172102 (2022)]
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Publisher's Note: “Enhanced spin Hall effect at high temperature in non-centrosymmetric silicide TaSi2 driven by Berry phase monopoles” [Appl. Phys. Lett. 123, 262402 (2023)] 
Ken Ishida; Takanori Shirokura; Pham Nam Hai
Appl. Phys. Lett. 124, 039903 (2024) https://doi.org/10.1063/5.0195671
Extract
View articletitled, Publisher's Note: “Enhanced spin Hall effect at high temperature in non-centrosymmetric silicide TaSi<sub>2</sub> driven by Berry phase monopoles” [Appl. Phys. Lett. <strong>123</strong>, 262402 (2023)]
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Publisher's Note: “Resistance switching stability of STO memristor under Au ion implantation” [Appl. Phys. Lett. 124, 013505 (2024)] 
Hai-Lian Li; Jie Su; Ming-Hui Xu; Shi-Jie Dong; Jing Bian; Peng-Shun Shan; Ruo-Wei Wang; Yong Liu; Xue-Lin Wang; Shuang-Qing Fan; Ming-Hui Cao; Tong Liu; Ting Xu; Wei-Jin Kong; Tao Liu
Appl. Phys. Lett. 124, 039904 (2024) https://doi.org/10.1063/5.0195995
Extract
View articletitled, Publisher's Note: “Resistance switching stability of STO memristor under Au ion implantation” [Appl. Phys. Lett. <strong>124</strong>, 013505 (2024)]
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